December 5th, 2019

Thursday December 5, 2019, 6:00-8:00PM
Title:  “Enabling Circuits and Technologies for Addressing Some of the 21st Century’s Hard Energy Challenges with Wide Bandgap Semiconductors and Devices”, Prof. Srabanti Chowdhury,  Electrical Engineering, Stanford University
Location: Texas Instruments Silicon Valley Auditorium
2900 Semiconductor Dr., Building E, Santa Clara, CA 
(Register here)

Date & Time: Thursday December 5, 2019, 6:00-8:00PM

Location: Texas Instruments Building E Conference Center, 2900 Semiconductor Drive, Santa Clara, CA 95051

Directions: TI-BldgE-Auditorium.pdf

Registration Link (Required) :

Registration Fee: FREE, Donation Requested

IEEE members – $5 donation
Non-members – $5


Promising key applications of electric vehicles, data centers, power management and power delivery to energy consuming high performance chips/SoCs, photovoltaics/solar, robotics, drones, and even routinely used adaptors that hook up our variety of mobility devices to the wall outlets have caused a resurgence in the field of power electronics. In this talk, I’ll discuss how Wide Bandgap Semiconductor (WBG) devices can lead to a more efficient way of realizing power conversion and its delivery. The associated challenges in circuit topologies, driver circuitry, thermal management, and reliability must be overcome to deliver cost-effective solutions at the system level. This is only possible with persistent circuit-device teaming to address key issues. I will give my take on the future devices that are capable of sustaining high voltages and making remarkable progress. The foundational technology of Wide Bandgap (WBG) materials, devices and circuits, particularly GaN, promises low loss, higher frequency operation future converter systems leading to smaller, lighter, and more efficient lower voltage and also high voltage > 600V converters capable of delivering higher power density. Various applications from small drones to electric vehicles can demand a range of power from mW to 100kW. I will also explain how some of these upcoming technologies and circuits can contribute to the field of radio frequency (RF) and mm-Wave resonators and power amplifiers e.g. switched mode power amplifiers. These technologies and devices will feed to circuit designs that will contribute to applications like medical imaging and wireless power transfer and more.


Srabanti Chowdhury (George and Ida Mary Hoover faculty fellow’19, Gabilan fellow ‘19) is an associate professor of Electrical Engineering (EE) at Stanford. Her research focuses on wideband gap (WBG) materials and device engineering for energy efficient and compact system architecture for power electronics, and RF applications. Besides Gallium Nitride, her group is exploring Diamond for various electronic applications. She received her B.Tech in India in Radiophysics and Electronics (Univ. of Calcutta) and her M.S and PhD in Electrical Engineering from University of California, Santa Barbara. She received the DARPA Young Faculty Award, NSF CAREER and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). Among her various synergistic activities, she has served over 10 premier conference committees in various capacities- starting with committee member to program committee chairs, and currently serves the IEDM executive committee She is a senior member of IEEE and an invitee by the NAE to the 2019 symposium on Frontiers of Engineering. To date, her work has produced over 5 book chapters, 80 journal papers, 100 conference presentations, and 20 issued patents.











Prof. Srabanti Chowdhury

The role of a semiconductor device

Identifying technology voids : High frequency power switching

How can power density increase?

Improved dynamic Ron on OGFETs using dry/wet hybrid etch

Ultra-wide bandgap semiconductors: Diamond

An engaged audience!







to the Santa Clara Valley chapter of the Solid State Circuits Society


July 2021

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