Sponsor: IEEE Buenaventura Section Photonics Chapter
Speaker: Caroline Reilly of DenBaars Group in the Materials Dept. UCSB

Meeting Date: March 5, 2021
Time: 1PM
Cost:
Reservations: IEEE
Summary:
The III-N system has proved successful for light-emitters in the high-energy visible and ultraviolet but has faced challenges in the lower-energy regime. The most common growth technique for nitrides devices, metalorganic vapor phase epitaxy, has been used here to grow InN quantum dots capable of emitting in the near-infrared. Both In-polar and N-polar quantum dots have been grown and characterized, showing differences in morphology and emission by atomic force microscopy and photoluminescence.